Thin film solar cell and manufacturing method thereof

A thin film solar cell including a substrate, a first conducting layer, a catalyst material layer, an oxide nanostructure, an intrinsic layer, a first type semiconductor layer and a second conducting layer is provided. The first conducting layer is disposed on the substrate. The catalyst material la...

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Bibliographische Detailangaben
Hauptverfasser:	CHEN, GUO-DUNG, TSAI, CHUNG-MIN, LIN, CHUN-JUNG, LEE, CHUEN-SHENG, YEW, TRI-RUNG, LU, HSIAO-LING
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS MANUFACTURE OR TREATMENT THEREOF NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE TRANSPORTING
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Beschreibung
Zusammenfassung:	A thin film solar cell including a substrate, a first conducting layer, a catalyst material layer, an oxide nanostructure, an intrinsic layer, a first type semiconductor layer and a second conducting layer is provided. The first conducting layer is disposed on the substrate. The catalyst material layer is disposed on the first conducting layer, wherein the material of the catalyst material layer is a metal compound. The oxide nanostructure is disposed on the catalyst material layer, wherein the material of the oxide nanostructure is a metal oxide compound. The oxide nanostructure is covered by the intrinsic layer. The first type semiconductor layer is disposed on the intrinsic layer. The second conducting layer is disposed on the first type semiconductor layer. A method for manufacturing the thin film solar cell is also provided.