Pixel structure and the method of forming the same

A pixel structure includes a drain shielding extension portion disposed on a floating semiconductor layer, wherein the floating semiconductor layer is formed together with a thin-film transistor channel layer. Therefore, the total thickness of the floating semiconductor layer and the drain shielding...

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Bibliographische Detailangaben
Hauptverfasser:	YEN, SSU-LIN, CHIANG, CHIA-MING
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	A pixel structure includes a drain shielding extension portion disposed on a floating semiconductor layer, wherein the floating semiconductor layer is formed together with a thin-film transistor channel layer. Therefore, the total thickness of the floating semiconductor layer and the drain shielding extension is increased, such that the distance between the gate line and the drain shielding extension is enlarged, and the coupling capacitance between the gate line and the drain shielding extension can be lowered. Therefore, the display panel with the pixel structure of the present invention can have low coupling capacitance so as to improve the flicker phenomena obviously.