High-brightness light emitting diode chip

The present invention provides a high-brightness light emitting diode chip, which comprises a substrate, an active film formed on the substrate, a transparent current diffusion layer formed on the active film, and an electrode unit for providing the active film with electric energy. Particularly, the top surface of the active film connected with the current diffusion layer includes a high-energy active area activated by high-energy particles and an electron flow channel area not activated by high-energy particles and thus having a resistance relatively lower than that of the high-energy active area. Therefore, when the electrode unit is employed to provide electric energy, current is guided by the current diffusion layer to uniformly dispense in lateral directions, and flow downward from the electron flow channel area to pass through the active film and to make the active film produce photons. As a result, the current can flow through the active film in proportion to corresponding manner of the electron flow