Gas supply member and plasma processing device

To provide a gas supply member that supplies gas uniformly, and to provide a plasma processing apparatus. The gas supply member 11 includes a loop part 12 of a circular state in which a flow path of the gas extending in a loop state is provided therein. The loop part 12 includes a loop first member...

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Bibliographische Detailangaben
Hauptverfasser:	MIHARA, NAOKI, SUDOU, KENJI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide a gas supply member that supplies gas uniformly, and to provide a plasma processing apparatus. The gas supply member 11 includes a loop part 12 of a circular state in which a flow path of the gas extending in a loop state is provided therein. The loop part 12 includes a loop first member made of quartz including a flat plate on which a plurality of supply holes 19 for supplying the gas are provided equally in a circumferential direction; and a loop second member made of quartz in a substantially U-shaped pattern which forms a space serving as the flow path of the gas between the first member and the second member.