Method for manufacturing transparent conductive oxide (TCO) films; properties and applications of such films
A method for manufacturing a boron doped, transparent, conductive zinc oxide layer from on a substrate is disclosed. The layer is being deposited from at least diethylzinc, water and diborane by low pressure chemical vapour deposition (LPCVD) in a process chamber of a deposition system comprising wh...
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| creator | TEREN, ANDREW BENAGLI, STEFANO WATKINS, OWAN CHARLES VOGLER, BENJAMIN MEIER, JOHANNES SCHNEIDER, STEFAN BORRELLO, DANIEL GOSSLA, MARIO DIMITRY, ZIMIN RAMOINO, LUCA KERSCHBAUMER, JOERG WIDER, JOACHIM POPPELLER, MARKUS KROLL, ULRICH KUHN, HANSJOERG ZINDEL, ARNO MARK, ANDREAS DESPONT, LAURENT VALLAT-SAUVAIN, EVELYNE |
| description | A method for manufacturing a boron doped, transparent, conductive zinc oxide layer from on a substrate is disclosed. The layer is being deposited from at least diethylzinc, water and diborane by low pressure chemical vapour deposition (LPCVD) in a process chamber of a deposition system comprising wherein the gas flow ratio of diethylzinc and water is kept between 0.87 and 1.3 and the gas flow ratio of diborane and diethylzinc is being kept between 0.05 and 0.4. The haze of such manufactured layer, measured as ratio of diffuse transmittance to total transmittance at 600 nm, is between 10 and 25%. |
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The layer is being deposited from at least diethylzinc, water and diborane by low pressure chemical vapour deposition (LPCVD) in a process chamber of a deposition system comprising wherein the gas flow ratio of diethylzinc and water is kept between 0.87 and 1.3 and the gas flow ratio of diborane and diethylzinc is being kept between 0.05 and 0.4. 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The layer is being deposited from at least diethylzinc, water and diborane by low pressure chemical vapour deposition (LPCVD) in a process chamber of a deposition system comprising wherein the gas flow ratio of diethylzinc and water is kept between 0.87 and 1.3 and the gas flow ratio of diborane and diethylzinc is being kept between 0.05 and 0.4. The haze of such manufactured layer, measured as ratio of diffuse transmittance to total transmittance at 600 nm, is between 10 and 25%.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CABLES CONDUCTORS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INSULATORS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES |
| title | Method for manufacturing transparent conductive oxide (TCO) films; properties and applications of such films |
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