Semiconductor light-emitting device, electrode thereof and production method, and lamp

This invention provides a semiconductor light-emitting device having an electrode with improved corrosion resistance and bonding ability, an electrode thereof and a production method; and a lamp. The semiconductor light-emitting device includes a substrate; a stacked semiconductor layer containing a light-emitting layer, which are formed on the substrate; first electrode (111), which is formed on the top surface of the stacked semiconductor layer; and second electrode, which is formed on the exposed surface formed on the stacked semiconductor layer by partially etching the stacked semiconductor layer, wherein the first electrode (111) includes a bonding layer (110) and a bonding-pad electrode (120) formed to cover the bonding layer (110). Furthermore, the bonding-pad electrode (120) has a thicker maximum thickness than that of the bonding layer (110) and includes one or two or more layers. At the outer circumferences of both the bonding layer (110) and the bonding-pad electrode (120), inclined surface (110c),