Method for reducing peeling of deposited film on process kit

A method includes providing a process chamber including a target, wherein the target has a first coefficient of thermal expansion (CTE); selecting a process kit including a surface layer having a second CTE close to the first CTE; and installing the process kit in the process chamber with the surfac...

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Bibliographische Detailangaben
Hauptverfasser:	CHUEH, CHIA-LIANG, CHAO, CHANG-HUI, PAI, JIUN-RONG, WANG, YEHIEH, CHUANG, CHIHOUS, CHEN, JIAUN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	A method includes providing a process chamber including a target, wherein the target has a first coefficient of thermal expansion (CTE); selecting a process kit including a surface layer having a second CTE close to the first CTE; and installing the process kit in the process chamber with the surface layer exposed to the process chamber. A ratio of a difference between the first CTE and the second CTE is less than about 35 percent.