Manufacturing method for semiconductor diamond-like carbon film
Disclosed is a manufacturing method for semiconductor diamond-like carbon film, in which a radio frequency magnetron sputtering method is used to fabricate boron-doped diamond-like carbon (B-DLC) film on silicon substrate, where the boron tablet is embedded in the graphite target as a composite targ...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | WANG, XI-JIU LIN, JIA-LUN GAN, MING-JI XU, FU-TING XU, KAI-HONG WU, YU-JUAN HU, SHAO-ZHONG SONG, JIAN-MIN WANG, XI-FU PU, RUI-ZHEN |
| description | Disclosed is a manufacturing method for semiconductor diamond-like carbon film, in which a radio frequency magnetron sputtering method is used to fabricate boron-doped diamond-like carbon (B-DLC) film on silicon substrate, where the boron tablet is embedded in the graphite target as a composite target and the boron tablet is the doping source. After the boron-doped diamond-like carbon film is formed, the film is annealed at 500 degrees Celsius for 10 minutes, and then Hall effect and four-point probe analysis are performed to analyze its carrier density and resistance rate respectively. It is proven that the polarity of the boron-doped diamond-like carbon film is the p-type semiconductor characteristics, and the carrier density can be as high as 1.3 *1018 cm-3 and the resistance rate is around 0.6 -cm; therefore, the boron-doped diamond-like carbon film of this invention has excellent semiconductor characteristics and high-temperature stability, and will have superior applications and developments on solar ce |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW201015623A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW201015623A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW201015623A3</originalsourceid><addsrcrecordid>eNrjZLD3TcwrTUtMLiktysxLV8hNLcnIT1FIyy9SKE7NzUzOz0spTS4B8lIyE3OBHN2czOxUheTEoqT8PIW0zJxcHgbWtMSc4lReKM3NoOjmGuLsoZtakB-fWlyQmJyal1oSHxJuZGBoYGhqZmTsaEyMGgDMizFo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Manufacturing method for semiconductor diamond-like carbon film</title><source>esp@cenet</source><creator>WANG, XI-JIU ; LIN, JIA-LUN ; GAN, MING-JI ; XU, FU-TING ; XU, KAI-HONG ; WU, YU-JUAN ; HU, SHAO-ZHONG ; SONG, JIAN-MIN ; WANG, XI-FU ; PU, RUI-ZHEN</creator><creatorcontrib>WANG, XI-JIU ; LIN, JIA-LUN ; GAN, MING-JI ; XU, FU-TING ; XU, KAI-HONG ; WU, YU-JUAN ; HU, SHAO-ZHONG ; SONG, JIAN-MIN ; WANG, XI-FU ; PU, RUI-ZHEN</creatorcontrib><description>Disclosed is a manufacturing method for semiconductor diamond-like carbon film, in which a radio frequency magnetron sputtering method is used to fabricate boron-doped diamond-like carbon (B-DLC) film on silicon substrate, where the boron tablet is embedded in the graphite target as a composite target and the boron tablet is the doping source. After the boron-doped diamond-like carbon film is formed, the film is annealed at 500 degrees Celsius for 10 minutes, and then Hall effect and four-point probe analysis are performed to analyze its carrier density and resistance rate respectively. It is proven that the polarity of the boron-doped diamond-like carbon film is the p-type semiconductor characteristics, and the carrier density can be as high as 1.3 *1018 cm-3 and the resistance rate is around 0.6 -cm; therefore, the boron-doped diamond-like carbon film of this invention has excellent semiconductor characteristics and high-temperature stability, and will have superior applications and developments on solar ce</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100416&DB=EPODOC&CC=TW&NR=201015623A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100416&DB=EPODOC&CC=TW&NR=201015623A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WANG, XI-JIU</creatorcontrib><creatorcontrib>LIN, JIA-LUN</creatorcontrib><creatorcontrib>GAN, MING-JI</creatorcontrib><creatorcontrib>XU, FU-TING</creatorcontrib><creatorcontrib>XU, KAI-HONG</creatorcontrib><creatorcontrib>WU, YU-JUAN</creatorcontrib><creatorcontrib>HU, SHAO-ZHONG</creatorcontrib><creatorcontrib>SONG, JIAN-MIN</creatorcontrib><creatorcontrib>WANG, XI-FU</creatorcontrib><creatorcontrib>PU, RUI-ZHEN</creatorcontrib><title>Manufacturing method for semiconductor diamond-like carbon film</title><description>Disclosed is a manufacturing method for semiconductor diamond-like carbon film, in which a radio frequency magnetron sputtering method is used to fabricate boron-doped diamond-like carbon (B-DLC) film on silicon substrate, where the boron tablet is embedded in the graphite target as a composite target and the boron tablet is the doping source. After the boron-doped diamond-like carbon film is formed, the film is annealed at 500 degrees Celsius for 10 minutes, and then Hall effect and four-point probe analysis are performed to analyze its carrier density and resistance rate respectively. It is proven that the polarity of the boron-doped diamond-like carbon film is the p-type semiconductor characteristics, and the carrier density can be as high as 1.3 *1018 cm-3 and the resistance rate is around 0.6 -cm; therefore, the boron-doped diamond-like carbon film of this invention has excellent semiconductor characteristics and high-temperature stability, and will have superior applications and developments on solar ce</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD3TcwrTUtMLiktysxLV8hNLcnIT1FIyy9SKE7NzUzOz0spTS4B8lIyE3OBHN2czOxUheTEoqT8PIW0zJxcHgbWtMSc4lReKM3NoOjmGuLsoZtakB-fWlyQmJyal1oSHxJuZGBoYGhqZmTsaEyMGgDMizFo</recordid><startdate>20100416</startdate><enddate>20100416</enddate><creator>WANG, XI-JIU</creator><creator>LIN, JIA-LUN</creator><creator>GAN, MING-JI</creator><creator>XU, FU-TING</creator><creator>XU, KAI-HONG</creator><creator>WU, YU-JUAN</creator><creator>HU, SHAO-ZHONG</creator><creator>SONG, JIAN-MIN</creator><creator>WANG, XI-FU</creator><creator>PU, RUI-ZHEN</creator><scope>EVB</scope></search><sort><creationdate>20100416</creationdate><title>Manufacturing method for semiconductor diamond-like carbon film</title><author>WANG, XI-JIU ; LIN, JIA-LUN ; GAN, MING-JI ; XU, FU-TING ; XU, KAI-HONG ; WU, YU-JUAN ; HU, SHAO-ZHONG ; SONG, JIAN-MIN ; WANG, XI-FU ; PU, RUI-ZHEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW201015623A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2010</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>WANG, XI-JIU</creatorcontrib><creatorcontrib>LIN, JIA-LUN</creatorcontrib><creatorcontrib>GAN, MING-JI</creatorcontrib><creatorcontrib>XU, FU-TING</creatorcontrib><creatorcontrib>XU, KAI-HONG</creatorcontrib><creatorcontrib>WU, YU-JUAN</creatorcontrib><creatorcontrib>HU, SHAO-ZHONG</creatorcontrib><creatorcontrib>SONG, JIAN-MIN</creatorcontrib><creatorcontrib>WANG, XI-FU</creatorcontrib><creatorcontrib>PU, RUI-ZHEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WANG, XI-JIU</au><au>LIN, JIA-LUN</au><au>GAN, MING-JI</au><au>XU, FU-TING</au><au>XU, KAI-HONG</au><au>WU, YU-JUAN</au><au>HU, SHAO-ZHONG</au><au>SONG, JIAN-MIN</au><au>WANG, XI-FU</au><au>PU, RUI-ZHEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Manufacturing method for semiconductor diamond-like carbon film</title><date>2010-04-16</date><risdate>2010</risdate><abstract>Disclosed is a manufacturing method for semiconductor diamond-like carbon film, in which a radio frequency magnetron sputtering method is used to fabricate boron-doped diamond-like carbon (B-DLC) film on silicon substrate, where the boron tablet is embedded in the graphite target as a composite target and the boron tablet is the doping source. After the boron-doped diamond-like carbon film is formed, the film is annealed at 500 degrees Celsius for 10 minutes, and then Hall effect and four-point probe analysis are performed to analyze its carrier density and resistance rate respectively. It is proven that the polarity of the boron-doped diamond-like carbon film is the p-type semiconductor characteristics, and the carrier density can be as high as 1.3 *1018 cm-3 and the resistance rate is around 0.6 -cm; therefore, the boron-doped diamond-like carbon film of this invention has excellent semiconductor characteristics and high-temperature stability, and will have superior applications and developments on solar ce</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_TW201015623A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Manufacturing method for semiconductor diamond-like carbon film |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T10%3A04%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WANG,%20XI-JIU&rft.date=2010-04-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW201015623A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |