Manufacturing method for semiconductor diamond-like carbon film

Disclosed is a manufacturing method for semiconductor diamond-like carbon film, in which a radio frequency magnetron sputtering method is used to fabricate boron-doped diamond-like carbon (B-DLC) film on silicon substrate, where the boron tablet is embedded in the graphite target as a composite target and the boron tablet is the doping source. After the boron-doped diamond-like carbon film is formed, the film is annealed at 500 degrees Celsius for 10 minutes, and then Hall effect and four-point probe analysis are performed to analyze its carrier density and resistance rate respectively. It is proven that the polarity of the boron-doped diamond-like carbon film is the p-type semiconductor characteristics, and the carrier density can be as high as 1.3 *1018 cm-3 and the resistance rate is around 0.6 -cm; therefore, the boron-doped diamond-like carbon film of this invention has excellent semiconductor characteristics and high-temperature stability, and will have superior applications and developments on solar ce