Transparent conductive film comprising FTO/ITO laminate

The present invention provides a transparent conductive film comprising an ITO film and a FTO film for laminating on a substrate, wherein some or all of the surface crystal structure of the FTO film is orthorhombic crystal structure, and provides a transparent conductive film comprising an ITO film...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	OOASHI, TATSUYA, YAMADA, SHIGEO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GLASS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention provides a transparent conductive film comprising an ITO film and a FTO film for laminating on a substrate, wherein some or all of the surface crystal structure of the FTO film is orthorhombic crystal structure, and provides a transparent conductive film comprising an ITO film and a FTO film for laminating on a substrate, wherein the film thickness of the FTO film is within the range of 5 nm to 20 nm and the FTO film is a continuous film. In addition, the present invention provides a method of producing said transparent conductive film, wherein an ITO film is formed on a substrate by Pyrosol method, followed by a FTO film is continuously formed on the ITO film.