Composition and method for removing hard mask

A method of hard-mask removal is provided which is suitable for removing a spin-coated organic/inorganic composite hard mask used in the step of semiconductor substrate processing in semiconductor element production. The method causes no damage to the substrate. Also provided is a composition for ha...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	AOBA, KAZUHIRO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CANDLES CHEMISTRY CINEMATOGRAPHY DETERGENT COMPOSITIONS DETERGENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FATTY ACIDS THEREFROM HOLOGRAPHY MATERIALS THEREFOR METALLURGY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS RECOVERY OF GLYCEROL RESIN SOAPS SEMICONDUCTOR DEVICES SOAP OR SOAP-MAKING USE OF SINGLE SUBSTANCES AS DETERGENTS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A method of hard-mask removal is provided which is suitable for removing a spin-coated organic/inorganic composite hard mask used in the step of semiconductor substrate processing in semiconductor element production. The method causes no damage to the substrate. Also provided is a composition for hard-mask removal which is for use in the removal method. The composition for hard-mask removal comprises: 70.0-98.0 mass%, excluding 70.0 mass%, dimethyl sulfoxide as ingredient (A); 0.5-7.5 mass% at least one quaternary ammonium hydroxide, as ingredient (B), selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, and trimethyl(2-hdyroxyethyl)ammonium hydroxide; and 1.5-22.5 mass%, excluding 22.5 mass%, water as ingredient (C). The method of hard-mask removal comprises the step of removing the organic/inorganic composite hard mask using the composition for hard-mask removal.