Semiconductor package including through-hole electrode and light-transmitting substrate

An imaging element is formed on the first main surface of a semiconductor substrate. An external electrode is formed on the second main surface of the semiconductor substrate. A through-hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed...

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Bibliographische Detailangaben
Hauptverfasser:	KAWASAKI, ATSUKO, SEKIGUCHI, MASAHIRO, MATSUO, MIE, AYABE, MASAYUKI, TANIDA, KAZUMASA, INOUE, IKUKO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An imaging element is formed on the first main surface of a semiconductor substrate. An external electrode is formed on the second main surface of the semiconductor substrate. A through-hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed on the through-hole electrode in the first main surface. An interlayer insulating film is formed on the first electrode pad and on the first main surface. A second electrode pad is formed on the interlayer insulating film. A passivation film is formed on the second electrode pad and the interlayer insulating film, and has an opening which exposes a portion of the second electrode pad. A contact plug is formed between the first and second electrode pads in a region which does not overlap the opening when viewed in a direction perpendicular to the surface of the semiconductor substrate.