Field effect elements
A field effect element comprising: a source electrode (6) and a drain-electrode (7), a semiconducting layer (2) comprising a semiconducting compound being in contact with the source electrode (6) and the drain electrode (7), a gate electrode (5), and a dielectric layer (3) comprising one or more com...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | A field effect element comprising: a source electrode (6) and a drain-electrode (7), a semiconducting layer (2) comprising a semiconducting compound being in contact with the source electrode (6) and the drain electrode (7), a gate electrode (5), and a dielectric layer (3) comprising one or more compounds selected from hygroscopic organic compounds and/or from nanoparticulate inorganic compounds being arranged between the semiconducting layer (2) and the gate electrode (5), wherein said hygroscopic organic compounds have a water absorption capability of more than 1.2% by weight, and a hydrophobic insulating layer (4) being arranged between the gate electrode (5) and the dielectric layer (3) preventing diffusion of water into the one or more hygroscopic compounds of the dielectric layer during the time of use of the field effect element, said hydrophobic insulating layer (4) having a water absorption capability of less than 1. 2% by weight, the semiconducting layer (2), the dielectric layer (3) or the hydropho |
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