Sputtering method

Provided is a sputtering method by which a thin film forming speed is prevented from greatly increasing and an excellent thin film is formed on a large area substrate to be processed, while suppressing abnormal discharge due to charge-up of the substrate. A plurality of targets (41a-41h) face a subs...

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Bibliographische Detailangaben
Hauptverfasser:	KOJIMA, TAKESHI, KIYOTA, JUNYA, ICHIHASHI, YUUJI, ARAI, MAKOTO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Provided is a sputtering method by which a thin film forming speed is prevented from greatly increasing and an excellent thin film is formed on a large area substrate to be processed, while suppressing abnormal discharge due to charge-up of the substrate. A plurality of targets (41a-41h) face a substrate (S) to be processed and are arranged in parallel at prescribed intervals in a sputter chamber (12). Power is supplied to each pair of targets at a prescribed frequency by alternately changing the polarity, and each target is alternately switched to an anode electrode and a cathode electrode to generate glow discharge between the anode electrode and the cathode electrode and form plasma atmosphere. Then, sputtering is performed to each target. While sputtering is performed, power supply to each target is intermittently reduced.