Method for forming amorphous carbon film, amorphous carbon film, multilayer resist film, method for manufacturing semiconductor device, and computer-readable recording medium

Disclosed is a method for forming an amorphous carbon film by using a parallel plate plasma CVD apparatus wherein an upper electrode and a lower electrode are arranged in a processing vessel. This method for forming an amorphous carbon film comprises a step for arranging a substrate on the lower electrode, and a step for depositing amorphous carbon on the substrate and forming a film of amorphous carbon by supplying carbon monoxide and an inert gas into the processing vessel and decomposing carbon monoxide by applying a high-frequency power to at least the upper electrode and producing a plasma. The upper electrode is preferably a carbon electrode.