Semiconductor device

A plurality of inner leads 14 are provided around a die pad 13. A grounded GND lead 16 is provided in a region between the die pad 13 and the plurality of inner leads 14. A semiconductor chip 17 and the plurality of inner leads 14 are connected to each other by a plurality of wires 21. The semicondu...

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Bibliographische Detailangaben
Hauptverfasser: HATAUCHI, KAZUSHI, ARAKAWA, HIDEYUKI, YASUDA, NAOYA, MISUMI, KAZUYUKI, TAKATA, YASUKI, KATSUYUKI FUKUDOME
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A plurality of inner leads 14 are provided around a die pad 13. A grounded GND lead 16 is provided in a region between the die pad 13 and the plurality of inner leads 14. A semiconductor chip 17 and the plurality of inner leads 14 are connected to each other by a plurality of wires 21. The semiconductor chip 17 and the GND lead 16 are connected to each other by GND wires 22. The GND wires 22 are disposed between a plurality of wires 21. The distance between ends of each adjacent pair of the inner leads 14 is 0.2 mm or less.