Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks
A method of patterning a substrate comprising first and second fields with a template, the template having a mold and a plurality of alignment forming areas and a plurality of template alignment marks, the method comprising: positioning a material on the first field of the substrate and a plurality...
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| creator | MELLIAR-SMITH, CHRISTOPHER MARK SREENIVASAN, SIDLGATA V MCMACKIN, IAN M CHOI, BYUNG-JIN |
| description | A method of patterning a substrate comprising first and second fields with a template, the template having a mold and a plurality of alignment forming areas and a plurality of template alignment marks, the method comprising: positioning a material on the first field of the substrate and a plurality of regions of the substrate, the plurality of regions laying outside of the first and second fields; positioning The mold and the substrate such that a desired spatial relationship between the mold and the first field of the substrate is obtained to define a pattern in the material on the first field of the substrate while concurrently defining a plurality of substrate alignment marks with the material in the plurality of regions of the substrate in superimposition with the plurality of alignment forming areas of the template; positioning a material on the second field of the substrate; and positioning the mold and the substrate to obtain a desired spatial relationship between the plurality of template alignment ma |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW200801794A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW200801794A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW200801794A3</originalsourceid><addsrcrecordid>eNrjZMj1TS3JyE9RyE9TSM7PSy4tKkrNK8mpVChILClJLcrLzEtXSFQoLk0qLilKLElVyEgsgwgV5JQWJeZkllSCdKZlpuakFCsk5qWgywAZ6Xm5QCMVchOLsot5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakl8SLiRgYGFgaG5pYmjMTFqAKFUQpo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks</title><source>esp@cenet</source><creator>MELLIAR-SMITH, CHRISTOPHER MARK ; SREENIVASAN, SIDLGATA V ; MCMACKIN, IAN M ; CHOI, BYUNG-JIN</creator><creatorcontrib>MELLIAR-SMITH, CHRISTOPHER MARK ; SREENIVASAN, SIDLGATA V ; MCMACKIN, IAN M ; CHOI, BYUNG-JIN</creatorcontrib><description>A method of patterning a substrate comprising first and second fields with a template, the template having a mold and a plurality of alignment forming areas and a plurality of template alignment marks, the method comprising: positioning a material on the first field of the substrate and a plurality of regions of the substrate, the plurality of regions laying outside of the first and second fields; positioning The mold and the substrate such that a desired spatial relationship between the mold and the first field of the substrate is obtained to define a pattern in the material on the first field of the substrate while concurrently defining a plurality of substrate alignment marks with the material in the plurality of regions of the substrate in superimposition with the plurality of alignment forming areas of the template; positioning a material on the second field of the substrate; and positioning the mold and the substrate to obtain a desired spatial relationship between the plurality of template alignment ma</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING ; APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; HOLOGRAPHY ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MATERIALS THEREFOR ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; NANOTECHNOLOGY ; ORIGINALS THEREFOR ; PERFORMING OPERATIONS ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR ; SHAPING OR JOINING OF PLASTICS ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TECHNICAL SUBJECTS COVERED BY FORMER USPC ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS ; TRANSPORTING ; WORKING OF PLASTICS ; WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080101&DB=EPODOC&CC=TW&NR=200801794A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080101&DB=EPODOC&CC=TW&NR=200801794A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MELLIAR-SMITH, CHRISTOPHER MARK</creatorcontrib><creatorcontrib>SREENIVASAN, SIDLGATA V</creatorcontrib><creatorcontrib>MCMACKIN, IAN M</creatorcontrib><creatorcontrib>CHOI, BYUNG-JIN</creatorcontrib><title>Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks</title><description>A method of patterning a substrate comprising first and second fields with a template, the template having a mold and a plurality of alignment forming areas and a plurality of template alignment marks, the method comprising: positioning a material on the first field of the substrate and a plurality of regions of the substrate, the plurality of regions laying outside of the first and second fields; positioning The mold and the substrate such that a desired spatial relationship between the mold and the first field of the substrate is obtained to define a pattern in the material on the first field of the substrate while concurrently defining a plurality of substrate alignment marks with the material in the plurality of regions of the substrate in superimposition with the plurality of alignment forming areas of the template; positioning a material on the second field of the substrate; and positioning the mold and the substrate to obtain a desired spatial relationship between the plurality of template alignment ma</description><subject>AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING</subject><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>HOLOGRAPHY</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MATERIALS THEREFOR</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>NANOTECHNOLOGY</subject><subject>ORIGINALS THEREFOR</subject><subject>PERFORMING OPERATIONS</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR</subject><subject>SHAPING OR JOINING OF PLASTICS</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS</subject><subject>TRANSPORTING</subject><subject>WORKING OF PLASTICS</subject><subject>WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZMj1TS3JyE9RyE9TSM7PSy4tKkrNK8mpVChILClJLcrLzEtXSFQoLk0qLilKLElVyEgsgwgV5JQWJeZkllSCdKZlpuakFCsk5qWgywAZ6Xm5QCMVchOLsot5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakl8SLiRgYGFgaG5pYmjMTFqAKFUQpo</recordid><startdate>20080101</startdate><enddate>20080101</enddate><creator>MELLIAR-SMITH, CHRISTOPHER MARK</creator><creator>SREENIVASAN, SIDLGATA V</creator><creator>MCMACKIN, IAN M</creator><creator>CHOI, BYUNG-JIN</creator><scope>EVB</scope></search><sort><creationdate>20080101</creationdate><title>Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks</title><author>MELLIAR-SMITH, CHRISTOPHER MARK ; SREENIVASAN, SIDLGATA V ; MCMACKIN, IAN M ; CHOI, BYUNG-JIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW200801794A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2008</creationdate><topic>AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING</topic><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>HOLOGRAPHY</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MATERIALS THEREFOR</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>NANOTECHNOLOGY</topic><topic>ORIGINALS THEREFOR</topic><topic>PERFORMING OPERATIONS</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR</topic><topic>SHAPING OR JOINING OF PLASTICS</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS</topic><topic>TRANSPORTING</topic><topic>WORKING OF PLASTICS</topic><topic>WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL</topic><toplevel>online_resources</toplevel><creatorcontrib>MELLIAR-SMITH, CHRISTOPHER MARK</creatorcontrib><creatorcontrib>SREENIVASAN, SIDLGATA V</creatorcontrib><creatorcontrib>MCMACKIN, IAN M</creatorcontrib><creatorcontrib>CHOI, BYUNG-JIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MELLIAR-SMITH, CHRISTOPHER MARK</au><au>SREENIVASAN, SIDLGATA V</au><au>MCMACKIN, IAN M</au><au>CHOI, BYUNG-JIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks</title><date>2008-01-01</date><risdate>2008</risdate><abstract>A method of patterning a substrate comprising first and second fields with a template, the template having a mold and a plurality of alignment forming areas and a plurality of template alignment marks, the method comprising: positioning a material on the first field of the substrate and a plurality of regions of the substrate, the plurality of regions laying outside of the first and second fields; positioning The mold and the substrate such that a desired spatial relationship between the mold and the first field of the substrate is obtained to define a pattern in the material on the first field of the substrate while concurrently defining a plurality of substrate alignment marks with the material in the plurality of regions of the substrate in superimposition with the plurality of alignment forming areas of the template; positioning a material on the second field of the substrate; and positioning the mold and the substrate to obtain a desired spatial relationship between the plurality of template alignment ma</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS HOLOGRAPHY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS THEREFOR MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS TRANSPORTING WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL |
| title | Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T22%3A51%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MELLIAR-SMITH,%20CHRISTOPHER%20MARK&rft.date=2008-01-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW200801794A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |