Implantation systems and a method of fabricating a semiconductor device

A method for identifying a drift dose integrator in an implantation system and an implantation system are provided. The implantation system includes a first dose integrator and a second dose integrator. The first dose integrator includes a first input configured to receive a first current generated...

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Bibliographische Detailangaben
Hauptverfasser:	LEE, TONG, CHEN, PU-FANG, WANG, JIH-HWA, CHIEN, FANGI, CHEN, OTTO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for identifying a drift dose integrator in an implantation system and an implantation system are provided. The implantation system includes a first dose integrator and a second dose integrator. The first dose integrator includes a first input configured to receive a first current generated from charges carried by implanted ions in a wafer, and a first output configured to output a first accumulated dosage value. The second dose integrator includes a second input configured to receive a second current generated from the charges carried by the implanted ions in the wafer, and a second output configured to output a second accumulated dosage value.