Light-emitting diode structure having bonding-pad reflection layer

The present invention relates to a light-emitting diode (LED) structure having a bonding-pad reflection layer, which comprises a substrate, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, an ITO layer, a first bonding-pad reflection layer, a second bonding-pad reflection layer, a third electrode, and a fourth electrode. When a bias voltage is applied to the third electrode and the fourth electrode of LED, and the bias voltage is the operating voltage, the light-emitting layer emits light, wherein the light emitted from the light-emitting layer to the electrode is reflected by the first bonding-pad reflection layer and the second bonding-pad reflection layer so as to prevent the third electrode and the fourth electrode from absorbing the light emitted from the light-emitting layer and thereby further promote the light-emitting performance of the LED.