Method for fabricating a back-side illuminated image sensor

A method for fabricating a back-side illuminated image sensor includes providing a semiconductor substrate having a front surface and back surface, providing a plurality of transistors, metal interconnects, and metal pads on front surface of the substrate, bonding a supporting layer to the front sur...

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Bibliographische Detailangaben
Hauptverfasser: YAO, LIANG-LUNG, FU, SHIHI, HSIEH, YUANIH, SHIAU, GWO-YUH, SHIU, FENG-JIA, TSAI, CHIASHIUNG
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A method for fabricating a back-side illuminated image sensor includes providing a semiconductor substrate having a front surface and back surface, providing a plurality of transistors, metal interconnects, and metal pads on front surface of the substrate, bonding a supporting layer to the front surface of the substrate, thinning-down the semiconductor substrate from the back surface, clearing-out a region of the semiconductor substrate from the back surface that covers a fine alignment mark by performing registration from the back surface and using a global alignment mark as a reference, and processing the back surface of the substrate by performing registration from the back surface and using the fine alignment mark as a reference.