Pixel structure and method for fabricating the same and detecting and repair defect of the same

Pixel structure and method for fabricating the same and detecting and repair defect of the same

A pixel structure comprises at least two scan lines and two data lines, which are intersecting to form at least one section inside these scanning lines and data lines. Furthermore, the pixel structure comprises a thin film transistor, a passivation layer, a defect detecting pattern and a pixel elect...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHENG, CHUNGIH, LIN, YU-HSIN
Format: Patent
Sprache:chi ; eng
Schlagworte:
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:A pixel structure comprises at least two scan lines and two data lines, which are intersecting to form at least one section inside these scanning lines and data lines. Furthermore, the pixel structure comprises a thin film transistor, a passivation layer, a defect detecting pattern and a pixel electrode. The pixel electrode is disposed on the passivation layer and is electrically connected to the thin film transistor through an opening of the passivation layer. The defect detecting pattern is disposed inside the section to detect if there is any residual of the conductive material or semiconductor material under.