Method for fabricating a pixel structure and the pixel structure
A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal, are formed on the substrate. Then, a gate insulating layer is formed to cover the gate, the scan line and the first terminal. After that, a semiconductor layer is defined on the gate insulating...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal, are formed on the substrate. Then, a gate insulating layer is formed to cover the gate, the scan line and the first terminal. After that, a semiconductor layer is defined on the gate insulating layer above the gate. Then, the gate insulating layer is patterned to exposure the first terminal. A transparent conductive layer is formed on the substrate. A patterned photoresist layer is formed on the transparent conductive layer. After that, the patterned photoresist layer is used as a mask to pattern the transparent conductive layer. So, a source, a drain, a data line, a pixel electrode, a second terminal, and a contacting pad are defined. Because only four masks are used to implement the above process, the cost of manufacturing can be reduced. |
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