CMP slurry

The invention discloses an CMP slurry including abrasive particles. The weight percentage of abrasive particles is between 0.1~2%, and the average particle size is between 1~50nm. The CMP slurry of the invention can be used to polish a metal or a dielectric film. Even if the slurry contains lower pa...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SHIAO, DANNY ZHENG-LONG, YU, CHRIS CHANG, YANG, ANDY CHUN-XIAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVES CHEMISTRY DYES MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SKI WAXES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The invention discloses an CMP slurry including abrasive particles. The weight percentage of abrasive particles is between 0.1~2%, and the average particle size is between 1~50nm. The CMP slurry of the invention can be used to polish a metal or a dielectric film. Even if the slurry contains lower particle concentration and smaller particles, higher removal rate can still be maintained. Accordingly, the surface of the polished metal or film has no erosion, less defects and better uniformity, and the cost is reduced.