Light-emitting diode structure

A light-emitting diode structure having a parasitical backward diode includes a substrate, a pattern semiconductor layer, a first conductive line, a second conductive line and an insulating layer. The substrate includes a first region and a second region. The pattern semiconductor layer has a first type doped semiconductor layer, a second type doped semiconductor layer and an active layer disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. As mentioned above, the light-emitting diode is formed by the first type doped semiconductor layer, the second type doped semiconductor layer and the active layer constituting in the first region. The first type doping semiconductor layer, an electro static discharge (ESD) protection diode is formed by the first type doped semiconductor layer, the second type doped semiconductor layer, the insulating layer and the active layer in the second region. The light-emitting diode structure of the present invention has the electr