Method for forming a blind hole in a substrate

Method for forming a blind hole in a substrate

A method for forming a blind hole in a substrate is disclosed. The substrate has a dielectric layer between an inner Cu layer and an outer Cu layer. Laser having wavelength 0.2 to 1.0 m is utilized to laser-drill the substrate. The laser is moved in a rotation way to etch through dielectric layer an...

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Hauptverfasser: LIU, CHEN-HSUAN, FANG, JEN KUANG, KAO, FENG, WEN, SHAUUO, LO, KUANG-LIN, PAN, YUNG-TENG
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Sprache:chi ; eng
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FANG, JEN KUANG
KAO, FENG
WEN, SHAUUO
LO, KUANG-LIN
PAN, YUNG-TENG
description A method for forming a blind hole in a substrate is disclosed. The substrate has a dielectric layer between an inner Cu layer and an outer Cu layer. Laser having wavelength 0.2 to 1.0 m is utilized to laser-drill the substrate. The laser is moved in a rotation way to etch through dielectric layer and to form a cavity in the inner Cu layer, thereby a blind hole is formed. Accordingly, plating copper within the blind hole doesn't have issue of electrical open by thermal test.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW200631126A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW200631126A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW200631126A3</originalsourceid><addsrcrecordid>eNrjZNDzTS3JyE9RSMsvAuHczLx0hUSFpJzMvBSFjPycVIXMPCC_uDSpuKQosSSVh4E1LTGnOJUXSnMzKLq5hjh76KYW5MenFhckJqfmpZbEh4QbGRiYGRsaGpk5GhOjBgCt8Cn0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for forming a blind hole in a substrate</title><source>esp@cenet</source><creator>LIU, CHEN-HSUAN ; FANG, JEN KUANG ; KAO, FENG ; WEN, SHAUUO ; LO, KUANG-LIN ; PAN, YUNG-TENG</creator><creatorcontrib>LIU, CHEN-HSUAN ; FANG, JEN KUANG ; KAO, FENG ; WEN, SHAUUO ; LO, KUANG-LIN ; PAN, YUNG-TENG</creatorcontrib><description>A method for forming a blind hole in a substrate is disclosed. The substrate has a dielectric layer between an inner Cu layer and an outer Cu layer. Laser having wavelength 0.2 to 1.0 m is utilized to laser-drill the substrate. The laser is moved in a rotation way to etch through dielectric layer and to form a cavity in the inner Cu layer, thereby a blind hole is formed. Accordingly, plating copper within the blind hole doesn't have issue of electrical open by thermal test.</description><language>chi ; eng</language><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20060901&amp;DB=EPODOC&amp;CC=TW&amp;NR=200631126A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20060901&amp;DB=EPODOC&amp;CC=TW&amp;NR=200631126A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIU, CHEN-HSUAN</creatorcontrib><creatorcontrib>FANG, JEN KUANG</creatorcontrib><creatorcontrib>KAO, FENG</creatorcontrib><creatorcontrib>WEN, SHAUUO</creatorcontrib><creatorcontrib>LO, KUANG-LIN</creatorcontrib><creatorcontrib>PAN, YUNG-TENG</creatorcontrib><title>Method for forming a blind hole in a substrate</title><description>A method for forming a blind hole in a substrate is disclosed. The substrate has a dielectric layer between an inner Cu layer and an outer Cu layer. Laser having wavelength 0.2 to 1.0 m is utilized to laser-drill the substrate. The laser is moved in a rotation way to etch through dielectric layer and to form a cavity in the inner Cu layer, thereby a blind hole is formed. Accordingly, plating copper within the blind hole doesn't have issue of electrical open by thermal test.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDzTS3JyE9RSMsvAuHczLx0hUSFpJzMvBSFjPycVIXMPCC_uDSpuKQosSSVh4E1LTGnOJUXSnMzKLq5hjh76KYW5MenFhckJqfmpZbEh4QbGRiYGRsaGpk5GhOjBgCt8Cn0</recordid><startdate>20060901</startdate><enddate>20060901</enddate><creator>LIU, CHEN-HSUAN</creator><creator>FANG, JEN KUANG</creator><creator>KAO, FENG</creator><creator>WEN, SHAUUO</creator><creator>LO, KUANG-LIN</creator><creator>PAN, YUNG-TENG</creator><scope>EVB</scope></search><sort><creationdate>20060901</creationdate><title>Method for forming a blind hole in a substrate</title><author>LIU, CHEN-HSUAN ; FANG, JEN KUANG ; KAO, FENG ; WEN, SHAUUO ; LO, KUANG-LIN ; PAN, YUNG-TENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW200631126A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2006</creationdate><toplevel>online_resources</toplevel><creatorcontrib>LIU, CHEN-HSUAN</creatorcontrib><creatorcontrib>FANG, JEN KUANG</creatorcontrib><creatorcontrib>KAO, FENG</creatorcontrib><creatorcontrib>WEN, SHAUUO</creatorcontrib><creatorcontrib>LO, KUANG-LIN</creatorcontrib><creatorcontrib>PAN, YUNG-TENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIU, CHEN-HSUAN</au><au>FANG, JEN KUANG</au><au>KAO, FENG</au><au>WEN, SHAUUO</au><au>LO, KUANG-LIN</au><au>PAN, YUNG-TENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for forming a blind hole in a substrate</title><date>2006-09-01</date><risdate>2006</risdate><abstract>A method for forming a blind hole in a substrate is disclosed. The substrate has a dielectric layer between an inner Cu layer and an outer Cu layer. Laser having wavelength 0.2 to 1.0 m is utilized to laser-drill the substrate. The laser is moved in a rotation way to etch through dielectric layer and to form a cavity in the inner Cu layer, thereby a blind hole is formed. Accordingly, plating copper within the blind hole doesn't have issue of electrical open by thermal test.</abstract><oa>free_for_read</oa></addata></record>
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title Method for forming a blind hole in a substrate
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T11%3A42%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LIU,%20CHEN-HSUAN&rft.date=2006-09-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW200631126A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true