Method of forming a photoresist pattern

A method for forming a photoresist pattern includes placing a semiconductor wafer (12) having condensable species in a chemically filtered photolithography system and desorbing the chemical species from the semiconductor wafer (12) in the chemically filtered photolithography system. After desorbing...

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Bibliographische Detailangaben
Hauptverfasser:	KROLL, AMANDA M, WINEBARGER, PAUL W, HUES, STEVEN M, NAGY, ANDREW G, SMITH, CHRISTOPHER J, HAWK, CASSANDRA M. JORDAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for forming a photoresist pattern includes placing a semiconductor wafer (12) having condensable species in a chemically filtered photolithography system and desorbing the chemical species from the semiconductor wafer (12) in the chemically filtered photolithography system. After desorbing the chemical species (12), photoresist is applied to the semiconductor wafer in the chemically filtered photolithography system. Next, the photoresist is exposed to energy to form a photoresist pattern in the chemically filtered photolithography system.