Silicon wafer etching process and composition

A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.

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Bibliographische Detailangaben
Hauptverfasser: CAPSTICK, JAMES R, SCHMIDT, JUDITH A, ZHANG, GUOQIANG (DAVID), ERK, HENRY F, STINSON, MARK G, DOANE, THOMAS E, GRABBE, ALEXIS, BJELOPAVLIC, MICK
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.