Locally thinned fins

Locally thinned fins

In a FinFET integrated circuit, the fins are formed with a reduced body thickness in the body area and then thickened in the S/D area outside the body to improve conductivity. The thickening is performed with epitaxial deposition while the lower portion of the gates are covered by a gate cover layer...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: BEINTNER, JOCHEN C
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In a FinFET integrated circuit, the fins are formed with a reduced body thickness in the body area and then thickened in the S/D area outside the body to improve conductivity. The thickening is performed with epitaxial deposition while the lower portion of the gates are covered by a gate cover layer to prevent thickening of the gates at the fin level, which may short the gate to the S/D.