Method of improving polysilicon film crystallinity

A method of improving a polysilicon film crystallinity in sequential lateral solidification. A mask having a pattern portion and a compensating portion is provided. The pattern portion defines a laser beam pattern scanning and transforming an amorphous silicon film to a polysilicon film. The compens...

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Bibliographische Detailangaben
Hauptverfasser:	CHANG, SHIHANG, LEE, RYAN, TSENG, CHANG-HO, HUNG, YU-TING, TSAI, YAW-MING
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ACCESSORIES THEREFOR APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES HOLOGRAPHY IRRADIATION DEVICES MATERIALS THEREFOR NUCLEAR ENGINEERING NUCLEAR PHYSICS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	A method of improving a polysilicon film crystallinity in sequential lateral solidification. A mask having a pattern portion and a compensating portion is provided. The pattern portion defines a laser beam pattern scanning and transforming an amorphous silicon film to a polysilicon film. The compensating portion adjacent to the pattern portion adjusts the energy of the laser beam injected to the polysilicon film to improve the grain shape thereof.