Physical vapor deposition process and apparatus thereof

Physical vapor deposition process and apparatus thereof

An apparatus of physical vapor deposition is described. The apparatus consists of a chamber, a wafer base and a wafer clamp ring. The wafer base is located on the bottom of the chamber for supporting a wafer. The wafer clamp ring is located over the wafer base for fixing the wafer thereon, exposes t...

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Hauptverfasser: FENG, KENNY, LAI, CHEN-HSING, PENG, CHENG-FU
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator FENG, KENNY
LAI, CHEN-HSING
PENG, CHENG-FU
description An apparatus of physical vapor deposition is described. The apparatus consists of a chamber, a wafer base and a wafer clamp ring. The wafer base is located on the bottom of the chamber for supporting a wafer. The wafer clamp ring is located over the wafer base for fixing the wafer thereon, exposes the deposition region of the wafer. Since the wafer clamp ring is an integral whole type element, it has stronger rigidity. Therefore, the life time of the wafer clamp ring is longer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Physical vapor deposition process and apparatus thereof
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