Physical vapor deposition process and apparatus thereof
An apparatus of physical vapor deposition is described. The apparatus consists of a chamber, a wafer base and a wafer clamp ring. The wafer base is located on the bottom of the chamber for supporting a wafer. The wafer clamp ring is located over the wafer base for fixing the wafer thereon, exposes t...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | An apparatus of physical vapor deposition is described. The apparatus consists of a chamber, a wafer base and a wafer clamp ring. The wafer base is located on the bottom of the chamber for supporting a wafer. The wafer clamp ring is located over the wafer base for fixing the wafer thereon, exposes the deposition region of the wafer. Since the wafer clamp ring is an integral whole type element, it has stronger rigidity. Therefore, the life time of the wafer clamp ring is longer. |
---|