Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof

Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof

A method for forming an array zinc oxide nanowires on a substrate is disclosed, which includes forming a crystal phase adjusting buffer on the surface of the substrate and grow 1D zinc oxide nanowires on the buffer by zinc vapor deposition, which are normal to the surface of the substrate is disclos...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HUANG, CHOR-JYE, CHEN, IRNG, TSENG, YUNG-KUAN
Format: Patent
Sprache:chi ; eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A method for forming an array zinc oxide nanowires on a substrate is disclosed, which includes forming a crystal phase adjusting buffer on the surface of the substrate and grow 1D zinc oxide nanowires on the buffer by zinc vapor deposition, which are normal to the surface of the substrate is disclosed. The crystal phase adjusting buffer including, for examples, nitride and oxide layers on a silicon substrate or a gallium nitride epitaxial layer on a sapphire substrate, which is used by the invention as a growth buffer layer for the zinc oxide nanowires. The zinc vapor phase deposition includes forming a layer of zinc oxide layer on the crystal phase adjusting buffer and forming vertical zinc oxide nanowires on the zinc oxide layer.