Low-pressure deposition of metal layers from metal-carbonyl precursors

A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residenc...

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Bibliographische Detailangaben
Hauptverfasser:	SUGIURA, MASAHITO, YAMASAKI, HIDEAKI, GOMI, ATUSHI, MATSUDA, TSUKASA, MALHOTRA, SANDRA G, HATANO, TATSUO, KAWANO, YUMIKO, MCFEELY, FENTON, LEUSINK, GERRIT J
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of the W(CO)6, Ni(CO)4, MO(CO)6, CO2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500 DEG C, by utilizing a residence time less than about 120 msec.