UV light detector and manufacturing method

The present invention is related to a kind of UV light detector and manufacturing method. In the invention, a buffer layer is formed on a substrate, and the epitaxial method is used to form a P-type gallium nitride (GaN) series layer. Then, by using ion implantation technique to implant Si+ ions int...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHEN, MENG, SHEU, JINN-KONG, CHI, GOUUNG, LEE, MIN-LUM
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS COLORIMETRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING
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