UV light detector and manufacturing method

The present invention is related to a kind of UV light detector and manufacturing method. In the invention, a buffer layer is formed on a substrate, and the epitaxial method is used to form a P-type gallium nitride (GaN) series layer. Then, by using ion implantation technique to implant Si+ ions into the P-type GaN series layer, one N-type GaN series layer, and another N-type GaN series layer which covers the N-type GaN series layer and has even higher implantation concentration, are formed. Finally, one ring-shaped metal layer and another metal layer are deposited on the P-type GaN series layer and the second N-type GaN series layer, respectively, for the ohmic contact layer. The invention is featured with using ion implantation technique to form one planar structure with P-type-N-type GaN series layer arrangement on the top face of the device such that the incident light can directly contact the depletion layer to enhance its quantum efficiency. Thus, the manufacturing process can be simplified to increase