Method for manufacturing semiconductor structure

A method for manufacturing a semiconductor structure is disclosed, by performing, for example, a thermal treatment to make a gate dielectric film located beneath a metal gate convert into a high-k dielectric layer after the metal gate formed on a portion of the gate dielectric film. Hence, the gate...

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Bibliographische Detailangaben
Hauptverfasser: LIN, CHIAHUI, LIN, CHENGUNG, HUANG, KUEIWU, LIN, YIHSHUNG, LIU, AI-SEN, WAN, WEN-KAI, PERNG, BAWING, LEI, MING-TA
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A method for manufacturing a semiconductor structure is disclosed, by performing, for example, a thermal treatment to make a gate dielectric film located beneath a metal gate convert into a high-k dielectric layer after the metal gate formed on a portion of the gate dielectric film. Hence, the gate dielectric film can be converted effectually, and the semiconductor structure composed of a high-k gate dielectric layer and the metal gate can be obtained.