Cooled deposition baffle in high density plasma semiconductor processing

An improved deposition baffle, that is provided to protect a dielectric window from conductive deposits, is provided in high-density-plasma apparatus. The baffle has a central circular part having slots cut therein that are interrupted by electrically conductive bridges. Ribs in the body between the...

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Bibliographische Detailangaben
Hauptverfasser:	KLESHOCK, MARK, PROVENCHER, TIM, BRCKA, JOZEF
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	An improved deposition baffle, that is provided to protect a dielectric window from conductive deposits, is provided in high-density-plasma apparatus. The baffle has a central circular part having slots cut therein that are interrupted by electrically conductive bridges. Ribs in the body between the slots have cooling fluid channel sections bored therein, which are joined in series by interconnecting channel portions in a peripheral annular part of the baffle to form a continuous serpentine cooling fluid flow path from an inlet to an outlet in the annular peripheral part of the baffle.