Method of forming bottom oxide in the trench
A method of forming bottom oxide in the trench is disclosed. The method includes steps of providing a semiconductor substrate and forming a trench in the semiconductor substrate; performing plasma enhanced chemical vapor deposition process to deposit an oxide layer on the sidewall of the trench and...
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| Hauptverfasser: | , , , |
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | A method of forming bottom oxide in the trench is disclosed. The method includes steps of providing a semiconductor substrate and forming a trench in the semiconductor substrate; performing plasma enhanced chemical vapor deposition process to deposit an oxide layer on the sidewall of the trench and on the surface of the silicon nitride by using TEOS as silicon source; and removing portion of the oxide layer on the sidewall and bottom of the trench to form a bottom oxide in the trench. |
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