Method of determining deposition temperature
A method of determining the deposition temperature, especially inside the reaction chamber of a chemical vapor deposition station. The method includes placing a deposition substrate inside the reaction chamber, forming a layer of metal silicide over the deposition substrate, measuring the silicon/me...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | A method of determining the deposition temperature, especially inside the reaction chamber of a chemical vapor deposition station. The method includes placing a deposition substrate inside the reaction chamber, forming a layer of metal silicide over the deposition substrate, measuring the silicon/metal atomic ratio and finding the deposition temperature according to a pre-determined temperature versus silicon/metal atomic ratio relationship. The method permits immediate determination as well as real-time monitoring of deposition temperature inside the station. |
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