Method of determining deposition temperature

A method of determining the deposition temperature, especially inside the reaction chamber of a chemical vapor deposition station. The method includes placing a deposition substrate inside the reaction chamber, forming a layer of metal silicide over the deposition substrate, measuring the silicon/me...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WU, TSUNGIN, LIEN, WENNG, LIN, TSUNG-DE, CHOU, SHIH-LIANG, HONG, TIAN-JUE, TSENG, KOU-YOW
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A method of determining the deposition temperature, especially inside the reaction chamber of a chemical vapor deposition station. The method includes placing a deposition substrate inside the reaction chamber, forming a layer of metal silicide over the deposition substrate, measuring the silicon/metal atomic ratio and finding the deposition temperature according to a pre-determined temperature versus silicon/metal atomic ratio relationship. The method permits immediate determination as well as real-time monitoring of deposition temperature inside the station.