Magnetoresistive memory cell array and MRAM memory comprising such array

The present invention describes a matrix with magnetoresistive memory cells arranged in logically organized rows and columns. Each memory cell includes a magnetoresistive element. The matrix comprises means for simultaneously reading from one cell in a column and writing to another cell in a column, or means for simultaneous reading from one cell in a row and writing to another cell in the same row. Such matrix can be used in a read-while-write MRAM memory.