Gate drive circuit

The present invention relates to a gate drive circuit. A first switching circuit 40 switches between a power source voltage Vcc and a gate of a MOSFET 1. A second switching circuit 50 switches between the ground GND and the gate of the MOSFET 1. Since a diode 53 is connected between a collector of a...

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Bibliographische Detailangaben
1. Verfasser:	KUROSU, YASUO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AMPLIFIERS APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION PULSE TECHNIQUE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention relates to a gate drive circuit. A first switching circuit 40 switches between a power source voltage Vcc and a gate of a MOSFET 1. A second switching circuit 50 switches between the ground GND and the gate of the MOSFET 1. Since a diode 53 is connected between a collector of a transistor 51 in the second switching circuit 50 and the gate of the MOSFET 1, even if the MOSFET 1 is turned off and a current flows to a parasitic capacity 20 to lower the gate voltage, a parasitic transistor being parasitic on the transistor 51 does not operate.