Method of forming atomic force microscope tips

The invention relates to a method for forming silicon atomic force microscope tips. The method includes the steps of depositing a masking layer onto a first layer of doped silicon so that some square or rectangular areas of the first layer of doped silicon are not covered by the masking layer, etchi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	SOORIAKUMAR, KATHIRGAMASUNDERARAM, PATMON, BRYAN KEITH, CHIR, KIM PONG DANIEL, TEE, LAY HAR ANGELINE, KOK, KITT WAI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM] MEASURING MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SCANNING-PROBE TECHNIQUES OR APPARATUS TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	The invention relates to a method for forming silicon atomic force microscope tips. The method includes the steps of depositing a masking layer onto a first layer of doped silicon so that some square or rectangular areas of the first layer of doped silicon are not covered by the masking layer, etching pyramidal apertures in the first layer of doped silicon, removing the masking layer, depositing a second layer do doped silicon onto the first layer of doped silicon, the second layer of doped silicon being oppositely doped to the first layer of doped silicon and etching away the first layer of doped silicon. Further steps may be added to form the atomic force microscope tips at the end of cantilevers.