Method and apparatus for manufacturing thin film

An electron beam evaporation source (42) that contains a first thin film material, an electron beam source (44) that emits an electron beam (45) to be used to evaporate the first thin film material by heating, and a resistance heating evaporation source (48) for evaporating a second thin film materi...

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Bibliographische Detailangaben
Hauptverfasser:	SAKAI, HITOSHI, HIGUCHI, HIROSHI, HONDA, KAZUYOSHI, ITOH, SYUUJI, INABA, JUNICHI, TAKAI, YORIKO, OKAZAKI, SADAYUKI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	An electron beam evaporation source (42) that contains a first thin film material, an electron beam source (44) that emits an electron beam (45) to be used to evaporate the first thin film material by heating, and a resistance heating evaporation source (48) for evaporating a second thin film material by heating using a resistance heating method are arranged so that the electron beam (45) passes through a vapor stream of the second thin film material. Thus, evaporated atoms of the second thin film material can be ionized. As a result, a thin film having improved properties and increased mechanical strength can be formed. Further, since it is no longer necessary to use another device for ionizing the evaporated atoms of the second thin film material, the complication of a configuration and a cost increase can be prevented.