Memory cell
In the case of the memory cell, in the trench, a layer sequence comprising a first oxide layer (1), a nitride layer (2), and a second oxide layer (3), facing the gate electrode, is present at the lateral trench walls, while the nitride layer (2) is absent in a curved region (4) of the trench bottom....
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | In the case of the memory cell, in the trench, a layer sequence comprising a first oxide layer (1), a nitride layer (2), and a second oxide layer (3), facing the gate electrode, is present at the lateral trench walls, while the nitride layer (2) is absent in a curved region (4) of the trench bottom. In an alternative configuration, in each case at least one step is formed at the lateral walls of the trench, preferably below the source region or the drain region, respectively. |
|---|