METHOD OF TESTING SURFACE LAYER OF SEMICODUCTOR SINGLE CRYSTAL

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Hauptverfasser:	IMAMOV RAFIK M,SU, BOLDYREV VLADIMIR P,SU, BUJKO LEV D,SU, KON VIKTOR G,SU, KOVALCHUK MIKHAIL V,SU, AFANASEV ALEKSANDR M,SU, KOVEV ERNST K,SU, LOBANOVICH EDUARD F,SU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING
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creator	IMAMOV RAFIK M,SU BOLDYREV VLADIMIR P,SU BUJKO LEV D,SU KON VIKTOR G,SU KOVALCHUK MIKHAIL V,SU AFANASEV ALEKSANDR M,SU KOVEV ERNST K,SU LOBANOVICH EDUARD F,SU
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_SU763751A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>SU763751A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_SU763751A13</originalsourceid><addsrcrecordid>eNrjZLDzdQ3x8HdR8HdTCHENDvH0c1cIDg1yc3R2VfBxjHQNAkkEu_p6Ovu7hDqH-AcpBAOV-LgqOAdFBoc4-vAwsKYl5hSn8kJpbgZ5N9cQZw_d1IL8-NTigsTk1LzUkvjgUHMzY3NTQ0dDY8IqAL7mKY8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF TESTING SURFACE LAYER OF SEMICODUCTOR SINGLE CRYSTAL</title><source>esp@cenet</source><creator>IMAMOV RAFIK M,SU ; BOLDYREV VLADIMIR P,SU ; BUJKO LEV D,SU ; KON VIKTOR G,SU ; KOVALCHUK MIKHAIL V,SU ; AFANASEV ALEKSANDR M,SU ; KOVEV ERNST K,SU ; LOBANOVICH EDUARD F,SU</creator><creatorcontrib>IMAMOV RAFIK M,SU ; BOLDYREV VLADIMIR P,SU ; BUJKO LEV D,SU ; KON VIKTOR G,SU ; KOVALCHUK MIKHAIL V,SU ; AFANASEV ALEKSANDR M,SU ; KOVEV ERNST K,SU ; LOBANOVICH EDUARD F,SU</creatorcontrib><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>1980</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19800915&DB=EPODOC&CC=SU&NR=763751A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19800915&DB=EPODOC&CC=SU&NR=763751A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IMAMOV RAFIK M,SU</creatorcontrib><creatorcontrib>BOLDYREV VLADIMIR P,SU</creatorcontrib><creatorcontrib>BUJKO LEV D,SU</creatorcontrib><creatorcontrib>KON VIKTOR G,SU</creatorcontrib><creatorcontrib>KOVALCHUK MIKHAIL V,SU</creatorcontrib><creatorcontrib>AFANASEV ALEKSANDR M,SU</creatorcontrib><creatorcontrib>KOVEV ERNST K,SU</creatorcontrib><creatorcontrib>LOBANOVICH EDUARD F,SU</creatorcontrib><title>METHOD OF TESTING SURFACE LAYER OF SEMICODUCTOR SINGLE CRYSTAL</title><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1980</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDzdQ3x8HdR8HdTCHENDvH0c1cIDg1yc3R2VfBxjHQNAkkEu_p6Ovu7hDqH-AcpBAOV-LgqOAdFBoc4-vAwsKYl5hSn8kJpbgZ5N9cQZw_d1IL8-NTigsTk1LzUkvjgUHMzY3NTQ0dDY8IqAL7mKY8</recordid><startdate>19800915</startdate><enddate>19800915</enddate><creator>IMAMOV RAFIK M,SU</creator><creator>BOLDYREV VLADIMIR P,SU</creator><creator>BUJKO LEV D,SU</creator><creator>KON VIKTOR G,SU</creator><creator>KOVALCHUK MIKHAIL V,SU</creator><creator>AFANASEV ALEKSANDR M,SU</creator><creator>KOVEV ERNST K,SU</creator><creator>LOBANOVICH EDUARD F,SU</creator><scope>EVB</scope></search><sort><creationdate>19800915</creationdate><title>METHOD OF TESTING SURFACE LAYER OF SEMICODUCTOR SINGLE CRYSTAL</title><author>IMAMOV RAFIK M,SU ; BOLDYREV VLADIMIR P,SU ; BUJKO LEV D,SU ; KON VIKTOR G,SU ; KOVALCHUK MIKHAIL V,SU ; AFANASEV ALEKSANDR M,SU ; KOVEV ERNST K,SU ; LOBANOVICH EDUARD F,SU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_SU763751A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1980</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>IMAMOV RAFIK M,SU</creatorcontrib><creatorcontrib>BOLDYREV VLADIMIR P,SU</creatorcontrib><creatorcontrib>BUJKO LEV D,SU</creatorcontrib><creatorcontrib>KON VIKTOR G,SU</creatorcontrib><creatorcontrib>KOVALCHUK MIKHAIL V,SU</creatorcontrib><creatorcontrib>AFANASEV ALEKSANDR M,SU</creatorcontrib><creatorcontrib>KOVEV ERNST K,SU</creatorcontrib><creatorcontrib>LOBANOVICH EDUARD F,SU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IMAMOV RAFIK M,SU</au><au>BOLDYREV VLADIMIR P,SU</au><au>BUJKO LEV D,SU</au><au>KON VIKTOR G,SU</au><au>KOVALCHUK MIKHAIL V,SU</au><au>AFANASEV ALEKSANDR M,SU</au><au>KOVEV ERNST K,SU</au><au>LOBANOVICH EDUARD F,SU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF TESTING SURFACE LAYER OF SEMICODUCTOR SINGLE CRYSTAL</title><date>1980-09-15</date><risdate>1980</risdate><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
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language	eng
recordid	cdi_epo_espacenet_SU763751A1
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING
title	METHOD OF TESTING SURFACE LAYER OF SEMICODUCTOR SINGLE CRYSTAL
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T21%3A23%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=IMAMOV%20RAFIK%20M,SU&rft.date=1980-09-15&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ESU763751A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true