PROCESS OF BRAZING OF CRYSTAL OF SEMICONDUCTOR DEVICE TO NICKLE-PLATES SURFACE OF HEAT SINK

PROCESS OF BRAZING OF CRYSTAL OF SEMICONDUCTOR DEVICE TO NICKLE-PLATES SURFACE OF HEAT SINK

FIELD: semiconductor equipment. SUBSTANCE: in process of brazing of crystal on nickle-plated surface of heat sink in vacuum heating of assembly with rate of 500 deg/min and evacuation of chamber are conducted simultaneously for the course of 40-60 s. Then assembly is cooled to 200-250 C in nitrogen...

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Bibliographische Detailangaben
Hauptverfasser: Borodulina N.A, Novikov B.B, Tjuljagin V.E, Arutjunjan E.V
Format: Patent
Sprache:eng ; rus
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:FIELD: semiconductor equipment. SUBSTANCE: in process of brazing of crystal on nickle-plated surface of heat sink in vacuum heating of assembly with rate of 500 deg/min and evacuation of chamber are conducted simultaneously for the course of 40-60 s. Then assembly is cooled to 200-250 C in nitrogen and to room temperature in atmospheric air. EFFECT: facilitated manufacture. Использование: технология полупроводниковых приборов. Сущность изобретения: при напайке кристалла на никелированную поверхность теплоотвода в вакууме нагрев сборки со скоростью 500 град/мин и откачку камеры начинают одновременно и осуществляют в течение 40-60 с. Охлаждение до 200-250°С осуществляют азотом, а до комнатной температуры - на атмосфере.