PROCESS OF DRY ETCHING OF STRUCTURES WITH CONDUCTIVE LAYER OF SURFACE IN TWO-CHAMBER PLANTS

FIELD: microelectronics, manufacture of superlarge integrated circuits. SUBSTANCE: plates are treated in two reaction chambers and spectral control device is connected to first or second chamber depending on value of expression (t+t)*(100-R)*V/100*h+2*R/100+R, where V is etching rate of conductive l...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Bazylenko M.V, Gulevich A.N, Tsybul'ko I.A
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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