METHOD FOR EPITAXIAL ACCRETION OF GALLIUM-ARSENIDE LAYERS ON SILICON SUBSTRATES AND DEVICE FOR IMPLEMENTATION OF SAID METHOD

FIELD: optical electronics. SUBSTANCE: method involves preparation of unsaturated solution-fusion of gallium arsenide in tin. Resulted solution-fusion contacts substrate which temperature is greater than or equal to temperature of solution-fusion. Composition substrate-liquid is cooled from side of...

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Hauptverfasser:	Abramov A.V, Dolganov A.V, Tret'jakov D.N, Derjagin N.G
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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