AVALANCHE OPTICAL DETECTOR

FIELD: semiconductor optical detectors. SUBSTANCE: avalanche optical detector contains semiconductor substrate, at least two semiconductor regions with conduction type opposite to that of substrate, buffer layer, and field electrode. Semiconductor regions are separated from field electrode by buffer...

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Bibliographische Detailangaben
Hauptverfasser:	Gasanov A.G, Golovin V.M, Sadygov Z.Ja, Jusipov N.Ju
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	FIELD: semiconductor optical detectors. SUBSTANCE: avalanche optical detector contains semiconductor substrate, at least two semiconductor regions with conduction type opposite to that of substrate, buffer layer, and field electrode. Semiconductor regions are separated from field electrode by buffer regions located in buffer layer. In this case, the following condition is observed: σ+σ