METHOD FOR MANUFACTURING SELF-ALIGNED GATE FIELD-EFFECT TRANSISTORS

FIELD: microelectronics; field-effect transistors operating at frequencies of several tens of GHz. SUBSTANCE: gallium arsenide is used for substrate, niobium or niobium nitride for gate. Masking coat is formed for producing source and drain regions. Then heat treatment is made in dry oxygen environm...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Sheljukhin E.Ju, Artamonov M.M, Grigor'ev A.T, Inkin V.N, Gol'dberg E.Ja, Il'ichev Eh.A, Akhin'ko I.A, Lipshits T.L
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!